Effects of Dopant Concentration on Microstructure and Strain States of in-situ Phosphorus-doped Epitaxial Silicon Films during Dry Oxidation

Thin Solid Films（2020）

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摘要

•Dry-oxidized heavily P-doped epitaxial Si films were investigated.•High P concentration (>6.2%) contributes to defect generation at near-surface Si:P region.•Oxidation leads to tensile strain release in Si:P films.

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关键词

In-situ P-doped epitaxial Si,Dry oxidation,Dopant segregation,Energy-dispersive X-ray spectroscopy,Reciprocal space mapping

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