The epitaxial growth behavior of thin PbMnTe film on BaF2(1 1 1): Influence of Mn doping density and substrate temperatures
Applied Surface Science(2020)
摘要
For high Mn content, MnTe phase segregated from the Pb1-xMnxTe phase for the cases of Mn content x is higher than 0.026. These segregated grains aggregated at positions of the threading dislocations, resulting in the formation of pit-like domains on the spiral islands of PbMnTe alloy film. Both the Mn substitutional limitation of Pb in PbTe and the quality of Pb1−xMnxTe film can be improved provided that the substrate was kept at high temperature while in deposition.
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关键词
PbMnTe,Doping mechanism,Diluted magnetic semiconductors,Molecular beam epitaxy
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