Investigation of defect structure in homoepitaxial (2¯01) β-Ga2O3 layers prepared by plasma-assisted molecular beam epitaxy
Journal of Alloys and Compounds, pp. 1550272020.
We report growth and comprehensive study on structural properties of homoepitaxial (2¯01) β-Ga2O3 layers grown by plasma-assisted molecular epitaxy. Effects of growth temperature on surface morphology, crystal quality of homoepitaxial β-Ga2O3 layers were investigated in detail. Characterization indicates that the growth temperature plays ...更多
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