Investigation of defect structure in homoepitaxial (2¯01) β-Ga2O3 layers prepared by plasma-assisted molecular beam epitaxy

Trong Si Ngo
Trong Si Ngo
Duc Duy Le
Duc Duy Le
Jungkuk Lee
Jungkuk Lee
Woo-Sik Lee
Woo-Sik Lee

Journal of Alloys and Compounds, pp. 1550272020.

被引用0|引用|浏览0|DOI:https://doi.org/10.1016/j.jallcom.2020.155027
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摘要

We report growth and comprehensive study on structural properties of homoepitaxial (2¯01) β-Ga2O3 layers grown by plasma-assisted molecular epitaxy. Effects of growth temperature on surface morphology, crystal quality of homoepitaxial β-Ga2O3 layers were investigated in detail. Characterization indicates that the growth temperature plays ...更多

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