Performance Characteristics Of Low Threshold Current 1.25 Mu M Type-Ii Gainas/Gaassb 'W'-Lasers For Optical Communications

Type-II 'W'-lasers have made an important contribution to the development of mid-infrared laser diodes. In this paper, we show that a similar approach can yield high performance lasers in the optical communications wavelength range. (GaIn)As/Ga(AsSb) type-II 'W' structures emitting at 1255 nm have been realised on a GaAs substrate and exhibit low room temperature threshold current densities of 200-300 A cm(-2), pulsed output powers exceeding 1 W for 100 mu m wide stripes, and a characteristic temperature T (0) approximate to 90 K around room temperature. Optical gain studies indicate a high modal gain around 15-23 cm(-1) at 200-300 A cm(-2) and low optical losses of 8 +/- 3 cm(-1). Analysis of the spontaneous emission indicates that at room temperature, up to 24% of the threshold current is due to radiative recombination, with the remaining current due to other thermally activated non-radiative processes. The observed decrease in differential quantum efficiency with increasing temperature suggests that this is primarily due to a carrier leakage process. The impact of these processes is discussed in terms of the potential for further device optimisation. Our results present strong figures of merit for near-infrared type-II laser diodes and indicate significant potential for their applications in optical communications.