Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors

V. N. Murashev, M. P. Konovalov,S. A. Legotin,S. I. Didenko,O. I. Rabinovich,A. A. Krasnov, K. A. Kuzmina

JOURNAL OF NANO- AND ELECTRONIC PHYSICS（2015）

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摘要

The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed.

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关键词

IGBT-transistors,Irradiation,Systems,Radioisotope

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