alpha-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire

APPLIED PHYSICS EXPRESS, 2018.

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Abstract:

Ten-period binary alpha-Al2O3/Ga2O3 superlattices were fabricated on r-plane sapphire substrates by molecular beam epitaxy. By systematic variation of alpha-Ga2O3 thickness and evaluation through X-ray reflectivity and diffraction measurements and scanning transmission electron microscopy, we verified that the superlattice with alpha-Ga2O...More

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