The Electronic Transport Properties in Boron-Doped Armchair Graphene Nanoribbon Junctions

NANOSCIENCE AND NANOTECHNOLOGY LETTERS(2015)

引用 5|浏览0
暂无评分
摘要
An electronic component using individual molecules is one of the ultimate goals in nanotechnology. In this work, by performing non-equilibrium Green's functions in combination with density-functions theory, the transport properties of armchair graphene nanoribbon (AGNR) devices are investigated, in which one lead is undoped AGNRs and the other is Boron (B)-doped AGNRs. The current voltage (I V) characteristic of B-doped AGNRs devices depends on their width and exhibits three distinct family (3n, 3n +1, 3n +2) behaviors. It was found that the 3n+2 system exhibits a metallic property and 3n and 3n +1 systems exhibit semi conductive property. Moreover, it shows rectifying behavior for W7 system.
更多
查看译文
关键词
Armchair Graphene Nanoribbons,Boron (B)-Doped,Rectifying Behavior,Electronic Transport Properties
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要