Simulation of Electrical Characteristics of Gan Vertical Schottky Diodes
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE(2016)
摘要
Reverse current of GaN vertical Schottky diodes is simulated using Silvaco ATLAS to optimize the geometry for the best performance. Several physical quantities and phenomena, such as carrier mobility and tunneling mechanism are studied to select the most realistic models. Breakdown voltage is qualitatively estimated based on the maximum electric field in the structure.
更多查看译文
关键词
current-voltage characteristics,gallium nitride,Schottky diode
AI 理解论文
溯源树
样例
生成溯源树,研究论文发展脉络
Chat Paper
正在生成论文摘要