Modeling High-Frequency Capacitance in Soi Mos Capacitors
Proceedings of SPIE, the International Society for Optical Engineering/Proceedings of SPIE(2016)
摘要
This paper presents a model of high frequency capacitance of a SOI MOSCAP. The capacitance in strong inversion is described with minority carrier redistribution in the inversion layer taken into account. The efficiency of the computational process is significantly improved. Moreover, it is suitable for the simulation of thin-film SOI structures. It may also be applied to the characterization of non-standard SOI MOSCAPS e.g. with nanocrystalline body.
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关键词
capacitance,microelectronics,silicon on insulator,strong inversion
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