Influence of nitridation on III-nitride films grown on graphene/quartz substrates by plasma-assisted molecular beam epitaxy
Journal of Crystal Growth(2020)
摘要
•Influence of nitridation on graphene/quartz has been carefully investigated.•A moderate amount of intentional defects on graphene are introduced by nitridation.•Suitable nitridation conditions are essential in van der Waals epitaxy on graphene.•Realization of large-scale unstrained GaN single-crystalline film at 530 °C by MBE.
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关键词
A1. Nitridation mechanism,B2. Semiconducting III-V materials,B1. Nanomaterials,A3. Van der Waals epitaxy,A3. Molecular beam epitaxy
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