External quantum efficiency of a resonant tunneling diode photo detector: Structural parameters and wavelength dependencies

In this study, a resonant tunneling diode with AlAs/GaAs double barrier structure is simulated by using the non-equilibrium green’s function. A lattice mastched InGaAs absorption layer is added to the device for light sensing at the wavelength λ = 600 nm. The Photo current of the device and source photo current curves versus light intensity are compared. The quantum efficiency of the device and its dependences on structural parameters (absorption layer thickness, spacer thickness, collector and emitter width) and different wavelengths were simulated and their influences on operation of the device were investigated. The external quantum efficiency of 0.95 was obtained for the device at room temperature. The simulation results show that changing of external quantum efficiency upon absorption layer thickness is nonlinear. Electric field through the device and the absorption curve versus wavelength are presented. Also with increasing of spacer layer and collector thicknesses, external quantum efficiency also changes.