Improved Electrical Properties of Top-Gate MoS2 Transistor With NH3-Plasma Treated HfO2 as Gate Dielectric
IEEE Electron Device Letters（2020）
摘要
The effects of NH
3
-plasma treating HfO
2
gate dielectric on electrical characteristics of top-gate (TG) MoS
2
FETs are investigated. The experimental results show that the increase of off-state current after growing HfO
2
top-gate dielectric can be considerably decreased by NH
3
-plasma treating HfO
2
, because the N incorporation from the NH
3
-plasma treatment can effectively eliminate the oxygen vacancies and reduce the positive oxide charges in HfO
2
. The fabricated TG MoS
2
FETs with the NH
3
-plasma treated HfO
2
as gate dielectric achieve excellent electrical performances: high on-off ratio of 2.1 × 10
7
, high carrier mobility of 78~87 cm
2
/Vs and near-ideal subthreshold swing of 72mV/dec. Therefore, the NH
3
-plasma treated HfO
2
as gate dielectric is highly beneficial for fabricating high-performance TG MoS
2
FETs.
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关键词
Top-gate MoS₂ transistors,NH₃ plasma,HfO₂ gate dielectric,oxygen vacancy,off-state current
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