Direct growth of GaAs solar cells on Si substrate via mesoporous Si buffer
SOLAR ENERGY MATERIALS AND SOLAR CELLS(2020)
摘要
Due to Silicon (Si) material abundance and lower cost, integration of high efficiency III-V solar cells on Si substrates is of major importance for future solar energy harvesting devices. In this paper, we report on the growth optimization with a detailed characterization of epitaxial growth of crystalline GaAs on porous silicon layers (PSL), and demonstration of single-junction GaAs solar cell on PSL performances. GaAs deposition is performed on engineered porous Si surfaces with different growth temperatures. One and two-steps growth (TSG) were also investigated. X-ray diffraction demonstrated almost one order of magnitude lower threading dislocation density (TDD) of 2x 10(8) cm(2) for TSG process of GaAs on PSL compared to the one-step growth. Atomic Force Microscopy and Scanning Electron Microscopy showed that a reduction of growth temperature leads to surface morphology improvement. A single junction GaAs solar cell heterostructure grown by TSG and fabricated atop the porous layer, demonstrated higher open-circuit voltage (V-oc) and fill factor (FF) when compared to an identical structure grown on crystalline Si (c-Si).
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关键词
Nanoheteroepitaxy,Porous silicon,GaAs solar cell,Two-step growth,Threading dislocation,X-ray diffraction
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