Temperature Gradient ZnO Deposited via ALD for High-Performance Transistor Applications
IEEE JOURNAL OF THE ELECTRON DEVICES SOCIETY(2020)
摘要
This work reports an alternative atomic layer deposition (ALD) method to fabricate ZnO thin-film transistors (TFTs). The ZnO film is deposited with temperature naturally-cooling process from 200 to 100 degrees C, called a "temperature gradient ZnO (TG-ZnO)"). After optimized annealing treatment at 300 degrees C, the TG-ZnO TFT shows an excellent performance compared to those fabricated with traditional constant temperature deposition, including a high saturation mobility (mu(sat)) of 11.8 cm(2)/Vs, which is 5 times higher than the ZnO TFT, a good on/off-state current ratio (I-on/I-off) of 1.9 x 10(7), a small subthreshold swing (SS) of 175 mV/decade and a threshold voltage (V-th) of 1.1 V. Meanwhile, the TG-ZnO TFT has better crystallization than 100 degrees C-ZnO and lower oxygen vacancies than 200.C-ZnO. These characters enable the TG-ZnO TFT not only to maintain a high mobility, but also to present a satisfactory I-on/I-off ratio. This promising deposition technique provides a new idea for fabricating TFTs with high mobility.
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关键词
Zinc oxide,II-VI semiconductor materials,Annealing,Thin film transistors,Temperature,Optical films,Photonic band gap,Thin-film transistors,temperature gradient ZnO,atomic layer deposition,oxygen vacancy
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