2 fully integrated pH sensor IC utiliz"/>

A 0.72 nW, 1 Sample/s Fully Integrated pH Sensor with 65.8 LSB/pH Sensitivity

2020 IEEE Symposium on VLSI Circuits(2020)

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摘要
This paper presents a 0.85 mm 2 fully integrated pH sensor IC utilizing an ion sensitive field effect transistor (ISFET) and reference field effect transistor (REFET) pair in which the native foundry passivation layer is used as an ion sensitive layer. The pH sensor has 10 bit resolution with 65.8 LSB/pH sensitivity, while consuming only 0.72 nW at 1 sample/s, improving an overall figure of merit (FoM) that accounts for power, sampling frequency, and sensitivity by > 4000×.
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关键词
native foundry passivation layer,ion sensitive field effect transistor,fully integrated pH sensor IC,ISFET,reference field effect transistor,REFET,word length 10.0 bit,power 0.72 nW
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