Dielectric Ruduced Surface Field Effect On Vertical Gan-On-Gan Nanowire Schottky Barrier Diodes

In this work, gallium nitride (GaN) nanowire (NW) Schottky barrier diodes was fabricated using well-optimized topdown approach. As-fabricated 100 x 800-nm-diameter NWs SBD with high current density over 1kA/cm(2) at a forward bias of 2.2V, a low differential specific ON-resistance of 0.15m Omega . cm(2) are demonstrated. By the virtue of dielectric Reduced Surface Field (RESURF) effect, the device also delivers a breakdown voltage of 515V, leading to a competitive Baliga's figure of merit of 1.76 GW/cm(2).