Tailored inclusion of semiconductor nanoparticles in nanoporous polystyrene-block-polymethyl methacrylate thin films

Nanoporous/nanocomposite thin films with controlled morphology at nanoscale were prepared onto transparent and conductive indium tin oxide (ITO) supports by exploiting the self-assembly of a lamellar polystyrene-b-poly (methyl methacrylate) (PS-b-PMMA) block copolymer (BCP). A perpendicular orientation of PS and PMMA lamellar nanodomains was achieved by grafting a random PS-r-PMMA copolymer to the ITO supports and successive thermal annealing. Stable and reproducible nanoporous morphologies, characterized by PS lamellar nanodomains of width equal to approximate to 20 nm alternating to nanochannels of width equal to approximate to 8 nm, were obtained by irradiating the samples with an appropriate UV-C dose able to fix the relative arrangement of PS domains through activation of cross-linking reactions and selective removal of PMMA blocks. Nanoporous hybrid composites with a stable morphology were obtained either by applying the UV irradiation protocol to BCP nanocomposites characterized by selective inclusion of zinc oxide (ZnO) nanoparticles (NPs) in the PS domains (nanocomposite first/nanopores after) or by selective infiltration of cadmium selenide (CdSe) NPs in the nanochannels left free by PMMA removal through UV irradiation (nanopores first/nanocomposite after), demonstrating the strenght of the approach.