Annealing behaviors of vacancy-type defects in AlN deposited by radio-frequency sputtering and metalorganic vapor phase epitaxy studied using monoenergetic positron beams

Journal of Applied Physics, pp. 0857042020.

Cited by: 0|Bibtex|Views0|DOI:https://doi.org/10.1063/5.0015225
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Abstract:

Vacancy-type defects in AlN films were probed by using monoenergetic positron beams. The AlN films were deposited on sapphire substrates by using a radio-frequency sputtering technique. Epitaxial films grown by metalorganic vapor phase epitaxy on the sputtered AlN films were also characterized. For the sputtered AlN, the major defect spec...More

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