Impact of Asymmetric Memory Hole Profile on Silicon Selective Epitaxial Growth in 3D NAND Memory : AEPM: Advanced Equipment Processes and Materials

advanced semiconductor manufacturing conference, 2020.

被引用0|引用|浏览1|DOI:https://doi.org/10.1109/ASMC49169.2020.9185381
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摘要

For silicon selective epitaxy growth (Si-SEG) process, an ex situ pre-epitaxial treatment (PET) is applied in order to remove the damaged layer and impurities. In this work, we observe asymmetric Si recess formed at the bottom of vertical channel (VC) holes in varied staircase environments leading to non-uniform, poor Si-SEG quality. A pr...更多

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