Transition Matrix Element and Recombination Mechanism of Hexagonal SiGe

A. Dijkstra,M. A. J. Tilburg,E. M. T. Fadaly,V. T. V. Lange,M. A. Verheijen, J. R. Suckert, C. Roedl,J. Furthmuller,F. Bechstedt,S. Botti,D. Busse,J. J. Finley,E. P. A. M. Bakkers,J. E. M. Haverkort

Conference on Lasers and Electro-Optics（2020）

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摘要

Hexagonal SiGe is a direct bandgap semiconductor due to zone folding. A Lasher- Stern-Wurfel fit of the photoluminescence spectrum unambiguously confirms band- to-band recombination. The transition matrix elements are large since the translational symmetry is broken.

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关键词

transition matrix element,hexagonal SiGe,direct bandgap semiconductor,zone folding,Lasher-Stern-Würfel fit,photoluminescence spectrum,band-band recombination,translational symmetry,SiGe

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