Mid-Infrared GeSn/SiGeSn Lasers and Photodetectors Monolithically Integrated on Silicon

Yiyin Zhou,Huong Tran,Wei Du,Jifeng Liu,Greg Sun,Richard Soref,Joe Margetis,John Tolle,Yong-Hang Zhang,Baohua Li,Mansour Mortazavi,Shui-Qing Yu

2020 CONFERENCE ON LASERS AND ELECTRO-OPTICS (CLEO)（2020）

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摘要

We demonstrated optically pumped GeSn lasers operating at 270 K and 3.5 μm, and photodetectors with spectral response cutoff at 3.65 μm and 300 K. Latest progress on electrically injected lasers will also be reported.

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关键词

electrically injected lasers,spectral response cutoff,GeSn lasers,photodetectors,temperature 270.0 K,temperature 300.0 K,wavelength 3.5 mum,GeSn-SiGeSn

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