Depth Profiling Of Surface Damage In N-Type Gan Induced By Inductively Coupled Plasma Reactive Ion Etching Using Photo-Electrochemical Techniques
APPLIED PHYSICS EXPRESS(2020)
摘要
Depth profiling of the dry-etching damage in n-type GaN induced by inductively coupled plasma reactive ion etching was carried out by cyclical electrochemical impedance spectroscopy (EIS) measurements and damage-free photo-electrochemical (PEC) etching. The GaN samples were dry-etched under different etching bias power (P-bias) conditions, and PEC etchings were conducted in increments of 10 nm after EIS measurements. The damage depth was determined to be less than 50 nm for the sample corresponding to P-bias = 30 W and was less than 10 nm for the two-step etching sample corresponding to P-bias = 30 W + 5 W.
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关键词
GaN, ICP-RIE, PEC, photo-electrochemical, etching
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