Fabry Perot Laser Arrays Covering C Plus L Band Obtained By Selective Area Growth On Inp-Sio2/Si Substrate

C. Besancon,D. Neel, G. Cerulo,N. Vaissiere,D. Make, K. Mekhazni,F. Pommereau,F. Fournel,C. Dupre, C. Jany,F. Bassani,S. David,T. Baron,J. Decobert

conference on lasers and electro optics（2020）

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摘要

Fabry-Perot laser arrays based on vertical p-i-n laser diode structures grown on InP layer directly bonded to Si wafer is presented. Lasing emission covering the C+L bands is achieved by means of a single-epitaxy Selective Area Growth (SAG) technology. (C) 2020 The Author(s)

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