Ga_0.84In_0.16As_0.14Sb_0.86/InAs_0.91Sb_0.09 Dual-Junction Device for Thermophotovoltaic Energy Conversion

We have theoretically shown thermophotovoltaic (TPV) energy conversion with Ga _0.84 In _0.16 As _0.14 Sb _0.86 /InAs _0.91 Sb _0.09 tandem cell, for which both subcells have the same lattice matched to GaSb substrate and can be experimentally fabricated in a high quality. Under the illumination of blackbody-like thermal spectra, the doping profiles of this device should be controlled as Nd(a) = 12(6) × 10 ¹⁷ cm ^-3 for top subcell while 10 ¹⁸⁽¹⁷⁾ cm ^-3 for bottom one, and energy conversion efficiency superior to 13% is expectable for radiator temperature ranging from 1700 to 2000 K, showing the enhancement in both efficiency and power density output when comparing with those for Ga _0.84 In _0.16 As _0.14 Sb _0.86 single-junction cell. We have thus demonstrated a new type of experimentally available dual-junction cell to boost the thermal radiation conversion of TPV system.