Stimulated emission threshold in thick GaN epilayers: interplay between charge carrier and photon dynamics

S. Nargelas,J. Mickevičius,A. Kadys,K. Jarašiūnas,T. Malinauskas

Optics & Laser Technology（2021）

引用 5|浏览15

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摘要

•SE threshold increases with layer thickness despite reduction of defect density.•Photon dynamics is the main factor controlling SE threshold.•Carrier lifetime weakly affects SE threshold.•Layer thickness is a compromise between higher overlap and lower optical losses.

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关键词

GaN,Laser diodes,Stimulated emission,Carrier dynamics modeling,Semiconductor waveguides

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