Study Of A Neutron-Resistant P(+)-Si/N-Zno Photodetector With Avalanching Gain
SENSORS AND ACTUATORS A-PHYSICAL(2021)
摘要
The photo detection properties under large reverse bias voltage and neutron irradiation effects of the p(+)-Si/n-ZnO photodetector were investigated. Intrinsic defects, V-O, V-Zn, and O-i, were observed in the non-irradiated ZnO film from the photoluminescence spectroscopy. The neutron induced defects in the neutron irradiated ZnO film reacted with the V-Zn, O-i and grain boundary defects resulting in the degradation of mid band emissions. The p(+)-Si/n-ZnO heterojunction shows a rectifying factor of >1000 at 300 K under +/- 1.5 V and an avalanche breakdown voltage of similar to 13 V. The impact ionization process is taken place in the p(+)-Si region revealed from the numerical calculation of the breakdown voltage of the p(+)-Si/n-ZnO heterojunction. The device can well perform as a linear and fast response photodetector with good repeatability. When operating under large reverse bias voltage, the p(+)-Si/n-ZnO can also act as an avalanching photodiode with the avalanche gain of similar to 30. The p(+)-Si/n-ZnO detector continues to be operative as an avalanche photodiode as well after neutron irradiation with the fluence of 10(15) n/cm(2) unless the gain degenerating to similar to 10, indicating the good neutron tolerance of the p(+)-Si/n-ZnO photodetector. (C) 2020 Elsevier B.V. All rights reserved.
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关键词
Avalanche breakdown, Heterojunction, Photodetector, ZnO, Neutron irradiation effect, Irradiation defect
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