Effect of Post-metallization Annealing on Interface Properties of Al 2 O 3 /GaN Fabricated on c - and m -plane Free-standing GaN SubstratesY. AndoThe Japan Society of Applied Physics（2019）引用 0|浏览5暂无评分AI 理解论文溯源树样例生成溯源树，研究论文发展脉络Chat Paper正在生成论文摘要
