Enhanced Capabilities of the Nano-Electronic Simulation Software (NESS)

Cristina Medina-Bailon,Oves Badami,Hamilton Carrillo-Nunez,Tapas Dutta,Daniel Nagy,Fikru Adamu-Lema,Vihar P. Georgiev,Asen Asenov

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)（2020）

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摘要

The aim of this paper is to present a flexible TCAD platform called Nano-Electronic Simulation Software (NESS) which enables the modelling of contemporary future electronic devices combining different simulation paradigms (with different degrees of complexity) in a unified simulation domain. NESS considers confinement-aware band structures, generates the main sources of variability, and can study their impact using different transport models. In particular, this work focuses on the new modules implemented: Kubo-Greenwood solver, Kinetic Monte Carlo solver, Gate Leakage calculation, and a full-band quantum transport solver in the presence of hole-phonon interactions using a mode-space $k \cdot p$ approach in combination with the existing NEGF module.

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关键词

Integrated Simulation Environment,Drift-Diffusion,Kubo-Greenwood,Gate Leakage,Kinetic Monte Carlo,Non-Equilibrium Green’s Function,Six band k.p,Effective mass,Variability,Integrated Simulation Environment,Drift-Diffusion,Kubo-Greenwood,Gate Leakage,Kinetic Monte Carlo,Non-Equilibrium Green’s Function,Six band k.p,Effective mass,Variability

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