TCAD-Assisted MultiPhysics Modeling & Simulation for Accelerating Silicon Quantum Dot Qubit Design

F. A. Mohiyaddin,G. Simion, N. I. Dumoulin Stuyck,R. Li,A. Elsayed,M. Shehata,S. Kubicek,C. Godfrin,B. T. Chan, J. Jussot, F. C ubotaru,S. Brebels,F. M. Bufler,G. Eneman,P. Weckx,P. Matagne,A. Spessot,B. Govoreanu,I. P. Radu

2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)（2020）

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摘要

We summarize the design parameters and modeling techniques for silicon quantum dot qubit devices. A general overview on the operation of the devices - including various methods of qubit readout, control, and interaction - is provided with relevant parameters. With these blocks forming the backbone of silicon quantum computation, the paper provides a guideline to aid and accelerate the design and optimization of silicon qubit devices.

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关键词

Silicon Quantum Computation,Device Design,Qubit Readout,Control & Interaction,Multiphysics Modeling,Silicon Quantum Computation,Device Design,Qubit Readout,Control Interaction,Multiphysics Modeling

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