A 16-GB 640-GB/s HBM2E DRAM With a Data-Bus Window Extension Technique and a Synergetic On-Die ECC Scheme
IEEE Journal of Solid-State Circuits(2021)
摘要
Circuit and design techniques are presented for enhancing the performance and reliability of a 3-D-stacked high bandwidth memory-2 extension (HBM2E). A data-bus window extension technique is implemented to cope with reduced clock cycle time ranging from data-path architecture, through-silicon via (TSV) placement, and TSV-PHY alignment. A power TSV placement in the middle of array and at the chip edge along with a dedicated top metal for power mesh improves power IR drop by 62%. An on-die ECC (OD-ECC) scheme featuring a self-scrubbing function is designed to be orthogonal to system ECC. An uncorrectable bit error rate (UBER) is improved by 10
5
times with the proposed OD-ECC and scrubbing scheme. A memory built-in self-test (MBIST) block supports low-frequency cell and core test in a parallel manner and all channel at-speed operation with adjustable ac parameters. The proposed parallel-bit MBIST reduces test time by 66%. A 16-GB HBM2E fabricated in the second generation of 10-nm class DRAM process achieves a bandwidth up to 640 GB/s (5 Gb/s/pin) and provides a stable bit-cell operation at a high temperature (e.g., 105 ° C).
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关键词
3-D-stacked memory,built-in self-test (BIST),data bus,high bandwidth memory (HBM),on-die ECC (OD-ECC),power delivery network (PDN),through-silicon via (TSV)
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