Low Threshold Current Single Mode 894 Nm Vcsels With Sio2/Si3n4 Dielectric Dbrs

Pingping Qiu,Bo Wu,Ming Li,Yaobin Li,Yiyang Xie,Qiang Kan

2020 IEEE PHOTONICS CONFERENCE (IPC)（2020）

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摘要

VCSELs using SiO2/Si3N4 dielectric DBRs are demonstrated. The devices operating near 894 nm have low threshold current of 0.3 mA, single-mode peak power of 2.15 mW, side-mode suppression ratio >30 dB under the full range of bias currents.

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关键词

Semiconductor lasers, Vertical cavity surface emitting lasers, Dielectric distributed Bragg reflectors

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