High Hole Mobility and Low Leakage Thin-Body (In)GaSb p-MOSFETs Grown on High-Bandgap AlGaSb
IEEE Journal of the Electron Devices Society(2021)
摘要
In this study, we demonstrated low leakage current and high mobility thin body (In)GaSb p-FETs. Through the optimization of the V/III ratio during the epitaxial growth, we achieved a highly insulating bottom Al
0.95
Ga
0.0
5
Sb barrier, which eliminates the junction leakage. We also suppressed the interface trap-assisted surface leakage current by introducing In
0.53
Ga
0.47
As surface passivation on the GaSb channel. Furthermore, GaSb/InGaSb/GaSb quantum well (QW) channel structure provided significant improvement in effective mobility (
${\mu }_{\mathrm{ eff}}$
) characteristics. As a result, the fabricated devices showed the lowest off-leakage current (
${I} _{\mathrm{ off}}$
), subthreshold slope (
${S}$
.
${S}$
.) and high
$\mu _{\mathrm{ eff}}$
among reported GaSb p-MOSFETs.
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关键词
GaSb,III-V,ultra-thin-body (UTB),InGaAs passivation
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