A Single BJT 10.2 ppm/°C Bandgap Reference in 45nm CMOS Technology.

Bandgap reference using 2 BJT devices are well explored in the literature. Usually, less number of BJT's would reduce the cost of the chip in modern CMOS technologies. A single BJT based reference was discussed here. V _BE of the BJT has been used as CTAT voltage and a CMOS differential pair offset voltage based PTAT generation circuit used to generate zero temp coefficient reference. A prototype was developed in 45nm TSMC CMOS technology and post-layout simulationswere performed. Designed for a nominal voltage of 525mV with 10.2ppm/°C temperature coefficient. Its supply sensitivity is 0.4% and works with 1V power supply. The proposed solution consumes 51.8μW power from 1V power supply and occupies 2478 μm ² silicon area.