Effect Of High Temperature Annealing And Shi Irradiation On The Migration Behaviour Of Xe Implanted Into Glassy Carbon

The effect of high temperature annealing and swift heavy ion irradiation (SHI) on the migration behaviour of xenon (Xe) implanted into glassy carbon (GC) have been investigated. GC substrates were implanted with 200 keV Xe ions to a fluence of 1 x 10(16) cm(-2) at room temperature. Some of the implanted samples were irradiated with 167 MeV Xe+26 ions to a fluence of 1 x 10(14) cm(-2) at room temperature. Both the as-implanted and implanted then irradiated were annealed in a vacuum at temperatures ranging from 1000 degrees C to 1500 degrees C in steps of 100 degrees C for 5 h. The RBS depth profiles showed that the implanted xenon migrates mostly into the bulk of the GC with the formation of a bimodal distribution. Microstructural changes in the glassy carbon substrate due to Xe bombardment and annealing were monitored using Raman spectroscopy. Raman results showed that swift heavy ion (SHI) irradiation caused some recrystallization in the amorphous region.