Encapsulation study of MOVPE grown InAs QDs by InP towards 1550 nm emission

Samiul Hasan,Olivier Richard,Clement Merckling,Wilfried Vandervorst

Journal of Crystal Growth（2021）

引用 4|浏览4

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摘要

•Encapsulation of S-K grown InAs QDs on InP(001) substrate by InP material.•Preservation of InAs QDs after the InP capping.•InAs QDs dimension shrinkage after InP capping by P/As exchange process.•P incorporation in InAs QDs during InP capping process.•1550 nm emission with significant increase of carrier lifetime from InP capped InAs QDs.

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关键词

InAs quantum dots,Stranski-Krastanov (S-K),Encapsulation,InP capping,1550 nm Emission

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