Performance Enhancement and Signal Distortion Analysis of Virtually Doped Nanotube Tunnel FET with Embedded Ferroelectric Gate Oxide

This paper demonstrates the effect of ferroelectric gate oxide on the electrostatic doped nanotube tunnel field-effect transistor (FE-ED-NTTFET). The proposed device is a dopingless device, and the electrostatic doped method is used for the operation of the device. For electrostatic doped operation, the operating source voltage (V-S) for the proposed device is -1.2 V. The intrinsic doping is used throughout the device. The thin ferroelectric material with a width of 2 nm is used as the gate oxide, to improve the performance of the proposed FE-ED-NTTFET device. For the detailed investigation of the proposed FE-ED-NTTFET device, the following parameters are taken into consideration such as device parameters, analogue parameters, and linearity parameters. In device parameters, energy band diagram, quasi Fermi-level of electron and hole, electron/hole mobility, electric filed, non-local tunneling (BTBT), and hole/electron concentration are taken into consideration. In analogue parameters ON current, OFF current, I-ON/I-OFF current ratio, threshold voltage, and sub-threshold swings are considered. For small-signal analysis linearity parameters such as TGF, cut-off frequencies, HD2, HD3, VIP2, VIP3, IIP3, and IMD3 have been discussed. The proposed FE-ED-NTTFET device shows the higher ON current (I-ON) 6.24uA, lower OFF current (I-OFF) order of 10(-17) A, higher I-ON/I-OFF current ratio 1*10(12,) and better sub-threshold swing (SS) 12 mV/decade for gate voltage (V-GS) 1.2 V.