Optimization Of Source Material For In-Situ Arsenic Doping Via Vapor Transport Deposition Of Cdte Films

In-situ doping of CdTe/CdSeTe films with arsenic is performed using pre-doped source material prepared by high pressure Bridgman (HPB) melt growth. Arsenic level in the source material is varied from 10(18)-10(20) cm(-3). Correspondingly, dopant incorporation in the films prepared using vapor transport deposition (VTD) varied from 3x10(17) cm(-3)-1x10(18) cm(-3). In this range, dopant activation is found to inversely correlate with the dopant incorporation, suggesting compensation. The results from this study indicate film properties can be adjusted by source material.