A Solution Processed Amorphous InGaZnO Thin-Film Transistor-Based Dosimeter for Gamma-Ray Detection and Its Reliability
IEEE Sensors Journal(2021)
摘要
Metal oxide semiconductors proved their usability in environmental monitoring applications and are considered successful in detecting ionizing radiation. This work reports the feasibility of solution-processed metal oxide semiconductor thin-film transistors for radiation sensing for the first time. In particular, the effects of a wide range of gamma radiation (100Gy to 10kGy) on the performance of solution-processed amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) transistors are investigated. The current-voltage (IV) characterization (both output and transfer characteristics) of IGZO-TFTs before and after irradiation are obtained to study different parameters. The radiation-induced changes in TFT are mainly observed in the threshold voltage shift (
$\sf \Delta ~\text{V}_{th}$
) and the increase of subthreshold swing. It is observed that up to a total dose of 1kGy, threshold voltage increases negatively (
$\sf \Delta \,\,\text{V}_{th}= -1.8\text{V}$
at 1 kGy), and beyond 1 kGy, threshold voltage increases positively (
$\Delta \,\,\text{V}_{\text{th}} =0.8\text{V}$
at 10 kGy). The XRD and AFM data of IGZO thin-film suggests minor structural and morphological changes after exposure to gamma irradiation. The corresponding sensitivity obtained with gamma irradiation is 27.78 mV/Gy (100Gy-1kGy), expressed in the threshold voltage shift. The effects of radiation-induced changes in TFTs are completely removed after storing irradiated TFTs in the vacuum at room temperature for 6 months.
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关键词
Radiation effects,Sensors,Threshold voltage,Substrates,Logic gates,Zinc,X-ray scattering
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