High Gain And Broadband Absorption Graphene Photodetector Decorated With Bi2te3 Nanowires

NANOMATERIALS(2021)

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摘要
A graphene photodetector decorated with Bi2Te3 nanowires (NWs) with a high gain of up to 3 x 10(4) and wide bandwidth window (400-2200 nm) has been demonstrated. The photoconductive gain was improved by two orders of magnitude compared to the gain of a photodetector using a graphene/Bi2Te3 nanoplate junction. Additionally, the position of photocurrent generation was investigated at the graphene/Bi2Te3 NWs junction. Eventually, with low bandgap Bi2Te3 NWs and a graphene junction, the photoresponsivity improved by 200% at 2200 nm (similar to 0.09 mA/W).
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关键词
chemical vapor deposition (CVD) graphene, photodetector, Bi2Te3 nanowires, infrared photodetector, graphene photodetector
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