2d Derivative Phase Induced Growth Of 3d All Inorganic Perovskite Micro-Nanowire Array Based Photodetectors

A large number of derivative phases in inorganic perovskites are reported with special structures and extraordinary performances in photoelectronic device applications. The reverse phase transition between derivative phases and perovskites usually induces recrystallization or forms mixed components. In this work, derivative phase-induced growth of the CsPbBr(3)micro-nanowire (MW) array by utilizing phase transition of the 2D CsPb(2)Br(5)phase is reported. Owing to its layered structure and phase transition, annealing of CsPb(2)Br(5)at a temperature of 550 degrees C combined with solvent quenching leads to a templating effect to form a high-quality CsBr MW array. Subsequent PbBr(2)deposition and the second annealing are employed to form aligned CsPbBr3MW arrays. Based on this method, a CsPbBr3MW array-based photodetector is fabricated. The large grain size, less grain boundaries, and lower surface potential of the CsPbBr3MW array lead to high device performance with a responsivity of 7.66 A W-1, a detectivity of approximate to 10(12)Jones, and long-term operational stability over 1900 min.