Post deposition annealing effect on the electrical properties of β-Ga 2 O 3 Nanowire

This study reports the fabrication of vertically aligned β-Ga 2 O 3 nanowires over the silicon substrate by the glancing angle deposition technique. Thermal annealing was done to the fabricated sample in ambient atmospheric conditions at 900 °C for 1 h. The annealed sample shows a higher average crystallite size (20.19 nm) when equated to the as-deposited one (13.72 nm). The annealed sample also shows a lower turn-on voltage of + 2.5 V. A maximum responsivity of 152.34 A/W and an internal gain of 675.02 were obtained for the annealed device at 260 nm. Low noise equivalent power (8.4 × 10 –14 W) and high sensitivity towards light were observed for the annealed device which makes it a promising contender for optoelectronics device application.