A 0.6-V V DD W -Band Neutralized Differential Low Noise Amplifier in 28-nm Bulk CMOS

This letter presents a ${W}$ -band low-power and high-gain differential low noise amplifier (LNA) fabricated in 28-nm bulk CMOS technology. This LNA operates at a 0.6-V supply voltage ( ${V} _{\mathbf {DD}}$ ) to achieve low power consumption and respond to the low-voltage regime anticipated in future CMOS technology nodes. To obtain sufficient voltage headroom and mitigate the Miller effect, thi...