An Improved Nonlinear Model for Millimeter-Wave InP HBT Including DC/AC Dispersion Effects

IEEE microwave and wireless components letters（2021）

引用 5|浏览6

暂无评分

摘要

An improved millimeter-wave nonlinear model for InP heterojunction bipolar transistor (HBT) is proposed in this letter. The frequency dispersion effect has been taken into account in the Agilent HBT model in Agilent ADS software. Model verification is carried out by comparison of measured and simulated dc and S-parameters up to 110 GHz.

查看译文

关键词

Radio frequency,Heterojunction bipolar transistors,Frequency measurement,Current measurement,Microwave transistors,Microwave theory and techniques,Microwave circuits,Device modeling,equivalent circuits,frequency dispersion,heterojunction bipolar transistor (HBT),millimeter-wave

AI 理解论文

溯源树

样例

生成溯源树，研究论文发展脉络

Chat Paper

正在生成论文摘要