BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 x 10¹⁴/cm² at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

Mengwei Si,Anna Murray,Zehao Lin,Joseph Andler,Junkang Li,Jinhyun Noh,Sami Alajlouni,Chang Niu,Xiao Lyu,Dongqi Zheng,Kerry Maize,Ali Shakouri,Suman Datta,Rakesh Agrawal,Peide D. Ye

IEEE Transactions on Electron Devices（2021）

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摘要

In this work, we report back-end-of-line (BEOL) compatible indium-tin-oxide (ITO) transistors with ferroelectric (FE) Hf0.5Zr0.5O2 (HZO) as gate insulator. A tunable high-density 2-D electron gas over 0.8 x 10(14)/cm(2) is achieved at the HZO/ITO oxide/oxide interface because of the FE polarization, which is confirmed by I-V, positive up and negative down (PUND), and Hall measurements. Such high carrier density can be completelymodulated and switched on and off by FE polarization switching, enabling high mobility ITO transistor with high ON-current and high ON/OFF ratio.

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关键词

Indium tin oxide,Transistors,Iron,Charge carrier density,Logic gates,Two dimensional displays,Switches,Back-end-of-line (BEOL) compatible,ferroelectric (FE),hafnium zirconium oxide,high carrier density,indium thin oxide,oxide semiconductor

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BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 x 1014/cm2 at Oxide/Oxide Interface by the Change of Ferroelectric Polarization

BEOL Compatible Indium-Tin-Oxide Transistors: Switching of Ultrahigh-Density 2-D Electron Gas Over 0.8 x 10¹⁴/cm² at Oxide/Oxide Interface by the Change of Ferroelectric Polarization