Ferroelectric and Antiferroelectric Hf/Zr oxide films: past, present and future
2021 International Symposium on VLSI Technology, Systems and Applications (VLSI-TSA)(2021)
摘要
Ferroelectric and antiferroelectric Hf/Zr-based oxide films have recently gained interest for memory and AI applications due to their promise of low power and CMOS compatibility. As Hf/Zr-based oxides are not ‘new’ materials, this paper will start with an overview of past learning on this material system. Recent results on fundamental understanding of the mechanism of ferroelectric and antiferroel...
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关键词
hf/zr oxide films,antiferroelectric hf/zr
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