Effects of Ultrasonication on the Electrical Performance of A-Igzo TFTs

this study, investigate the effect of ultrasonication on the oxide channel layer of film transistors (TFTs) based on different processing limes. The ultrasonication treatment was applied at 40 kHz for 0, 10, 20, and 40 min before post annealing. Ultrasonication improved the electrical and surface morphology properties of a-IGZO thin-film transistors. The a-IGZO TFTs that underwent ultrasonication for 10 min exhibited enhanced electrical performance (saturation mobilities of 11.9 cm2/Vs, current on/off ratio of 3.5 x 10', threshold voltage of 6.1 V, and subthreshold voltage of 0.65 V/dec). Moreover, the dynamic and static responses of a resistive load-type inverter based on a-IGZO with ultrasonication are examined.