Lg = 40nm Composite Channel MOS-HEMT Exhibiting f τ = 420 GHz, f max = 562 GHz

An L g = 40 nm, t ch = 7.0 nm In 0.53 Ga 0.47 As / InAs MOS-HEMT exhibiting f t = 420 GHz and f max = 562 GHz at V DS = 0.70 V, V GS = 0.30 V, and I DS = 0.793 mA/µm is reported. A 0.83 nm / 1.71 nm Al x O y N z / ZrO 2 high-k gate dielectric is used with a 3.0 / 4.0 nm In 0.53 Ga 0.47 As / InAs composite channel. At 40 nm L g , high peak g m,e = 2.9 mS/µm and record low g ds,e = 0.18 mS/µm at V D...