High Electron-Mobility of a Transparent and Conductive Zr-Doped In 2 O 3 Deposited by Reactive Magnetron Sputtering

We report on the optoelectronic properties of zirconium-doped indium oxide layers deposited by RF sputtering, using different oxygen to total flow ratios [r(O2) = O2/Ar, ranging from 1% to 10%]. The results of X-ray diffraction show that the IZrO films grown on glass substrates exhibit mixed crystallographic orientations. The depth profiling of the various elements throughout...