Characterization and modeling of 650V GaN diodes for high frequency power conversion
2021 IEEE Design Methodologies Conference (DMC)(2021)
摘要
The constant growth of electric consumption leads to considerable progress in power conversion. Recent studies have shown that using Gallium Nitride (GaN) as a technological building bloc permits to develop converter operating at high frequency with reduced volume and weight. Furthermore, it is conceivable the monolithic co-integration of devices towards full-GaN switching cells. Therefore, charac...
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关键词
Resistance,Silicon carbide,Switches,HEMTs,Scattering parameters,High frequency,Power conversion
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