Characterization and modeling of 650V GaN diodes for high frequency power conversion

2021 IEEE Design Methodologies Conference (DMC)(2021)

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摘要
The constant growth of electric consumption leads to considerable progress in power conversion. Recent studies have shown that using Gallium Nitride (GaN) as a technological building bloc permits to develop converter operating at high frequency with reduced volume and weight. Furthermore, it is conceivable the monolithic co-integration of devices towards full-GaN switching cells. Therefore, charac...
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关键词
Resistance,Silicon carbide,Switches,HEMTs,Scattering parameters,High frequency,Power conversion
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