Novel Three-Input Gates for Silicon Quantum Dot

Maria D. Vieira, Ícaro G. S. Moreira, Pedro A. R. L. Silva,Laysson O. Luz,Ricardo S. Ferreira,Omar P. V. Neto,José A. M. Nacif

2021 34th SBC/SBMicro/IEEE/ACM Symposium on Integrated Circuits and Systems Design (SBCCI)(2021)

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摘要
Atomic Silicon Quantum Dot (SQD) is a prominent alternative to the current Complementary Metal Oxide Semiconductor (CMOS) transistor due to the low energy consumption and high integration potential. This emerging technology applies Silicon Dangling Bonds (DBs) that behave similarly to quantum-dots. Moreover, it does not require cryogenic temperatures, unlike other quantum-dot-based approaches. Thi...
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关键词
Integrated circuits,Energy consumption,Quantum dots,Metals,Cryogenics,Logic gates,Silicon
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